A numerical model has been developed to calculate the magnetic potential and temperature distribution in a RF heating system used for a SiC vapor growth system. The magnetic vector potential is calculated by solving the Maxwell equations. The heating power generated in the graphite susceptor is obtained using the Joules law. The temperature profile in a growth chamber is then calculated by solving the energy transport equation with induction heat as a source term. Two sets of grid system have been used to speed up the calculation. The frequency of RF heating and coil current are found to have significant impact on heat generation and its distribution in the graphite susceptor. The maximum temperature in the crucible has a linear relationship with the input power; however, the power input does not influence significantly the temperature gradient. To optimize the heating system for a SiC vapor growth system, the current, frequency, and geometry need to be carefully designed.