An effort has been made in this study to develop a model which can predict wire sweep during semiconductor chip encapsulation with transfer molding. The calculation of wire sweep during encapsulation depends on many factors. In this study, a step-by-step approach has been used considering one factor at a time. As the first step, the wire deformation has been measured and calculated under a known dead-weight loading. The next step has been to measure and calculate the deformation of a single straight wire attached to the mid-plane of a rectangular cavity due to the flow of a clear and homogeneous fluid. Finally, the wire deformation due to the flow has been measured and calculated when a wire of general shape is attached to a leadframe. The effect of bubble on the wire-sweep has been analyzed qualitatively. Through this series of experiments, a first step in the development of model for the prediction of wire sweep during chip encapsulation has been made.
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September 1995
Technical Papers
A Study on Wire Sweep in Encapsulation of Semiconductor Chips Using Simulated Experiments
Sejin Han,
Sejin Han
Cornell Injection Molding Program, Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY 14853
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K. K. Wang
K. K. Wang
Cornell Injection Molding Program, Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY 14853
Search for other works by this author on:
Sejin Han
Cornell Injection Molding Program, Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY 14853
K. K. Wang
Cornell Injection Molding Program, Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY 14853
J. Electron. Packag. Sep 1995, 117(3): 178-184 (7 pages)
Published Online: September 1, 1995
Article history
Received:
October 2, 1993
Revised:
June 5, 1995
Online:
November 6, 2007
Citation
Han, S., and Wang, K. K. (September 1, 1995). "A Study on Wire Sweep in Encapsulation of Semiconductor Chips Using Simulated Experiments." ASME. J. Electron. Packag. September 1995; 117(3): 178–184. https://doi.org/10.1115/1.2792089
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