Two of the primary variables affecting junction temperature of semiconductor devices are the self-heating due to internal power dissipation within the device and the device's base (or ambient) temperature. For materials with temperature-independent material properties, the junction temperature is a linear function of these two variables, which allows for simple “scaling” of the junction temperature for arbitrary dissipation and/or base temperatures. In materials with temperature-dependent material properties, however, the relationship between junction temperature and either variable is nonlinear. The scaling law between junction temperature and dissipated power and base temperature for materials with temperature-dependent material properties are developed in this work. This scaling law allows for fast computation of junction temperature for any values of power dissipation and/or base temperature given the junction temperature for one specific instance of power dissipation and base temperature and hence may find applicability in fast electrothermal solvers.
Skip Nav Destination
Article navigation
Research-Article
Ambient Temperature and Self-Heating Scaling Laws for Materials With Temperature-Dependent Thermal Conductivity
John Ditri
John Ditri
Search for other works by this author on:
John Ditri
Contributed by the Heat Transfer Division of ASME for publication in the JOURNAL OF HEAT TRANSFER. Manuscript received January 23, 2018; final manuscript received April 19, 2018; published online June 8, 2018. Assoc. Editor: George S. Dulikravich.
J. Heat Transfer. Oct 2018, 140(10): 102006 (7 pages)
Published Online: June 8, 2018
Article history
Received:
January 23, 2018
Revised:
April 19, 2018
Citation
Ditri, J. (June 8, 2018). "Ambient Temperature and Self-Heating Scaling Laws for Materials With Temperature-Dependent Thermal Conductivity." ASME. J. Heat Transfer. October 2018; 140(10): 102006. https://doi.org/10.1115/1.4040151
Download citation file:
Get Email Alerts
Cited By
Related Articles
Optimized design and simulation study of liquid-cooled heat sink model for IGBT module based on TPMS structure
J. Thermal Sci. Eng. Appl (January,0001)
Nano-Phase Change Materials for Electronics Cooling Applications
J. Heat Transfer (May,2017)
Topology Optimization Design for Heat Dissipation Performance of Semiconductor Ignition Device
J. Thermal Sci. Eng. Appl (October,2023)
Size Effects on Nonequilibrium Laser Heating of Metal Films
J. Heat Transfer (November,1993)
Related Proceedings Papers
Related Chapters
Steady Heat Conduction with Variable Heat Conductivity
Introduction to Finite Element, Boundary Element, and Meshless Methods: With Applications to Heat Transfer and Fluid Flow
Orthotropic Media
Thermal Spreading and Contact Resistance: Fundamentals and Applications
A Dependable Answer
Hot Air Rises and Heat Sinks: Everything You Know about Cooling Electronics Is Wrong